发明名称 |
METHOD FOR MEASURING TEMPERATURE OF SEMICONDUCTOR DEVICE AND APPARATUS FOR MEASURING TEMPERATURE OF SEMICONDUCTOR DEVICE |
摘要 |
In the temperature measurement method for semiconductor devices, a junction temperature of a SiC GTO is determined by exploiting large temperature dependence of accumulation time ts as turn-OFF characteristic time of the SiC GTO that is a semiconductor switching element. The accumulation time ts is a time duration lasting from rise start time t1 of a gate turn-OFF current Ig until decay start time t2 of an anode current Ia. In this temperature measurement method, measured turn-OFF characteristic time is converted into a junction temperature of the SiC GTO based on relational characteristics between preliminarily measured accumulation time ts and junction temperatures.
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申请公布号 |
EP1947433(A1) |
申请公布日期 |
2008.07.23 |
申请号 |
EP20060810741 |
申请日期 |
2006.09.28 |
申请人 |
THE KANSAI ELECTRIC POWER CO., INC. |
发明人 |
ASANO, KATSUNORI;SUGAWARA, YOSHITAKA |
分类号 |
G01K7/00;G01K7/01 |
主分类号 |
G01K7/00 |
代理机构 |
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