| 摘要 |
A method for fabricating a semiconductor device having a low-k porous lower dielectric layer is provided to avoid damage caused by a conventional plasma method by sealing a pore of a porous low dielectric layer while using ions of reducing gas. A metal interconnection(30) is formed on a semiconductor substrate. A porous low dielectric layer(40) is formed on the metal interconnection and the semiconductor substrate. Ions of reducing gas are implanted into the porous low dielectric layer to seal pores(42) of the porous low dielectric layer. A diffusion barrier layer is deposited on the metal interconnection and the porous low dielectric layer. A metal layer is formed on the diffusion barrier layer. The ions of the reducing gas can be implanted into the metal interconnection as well as the porous low dielectric layer.
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