| 摘要 |
A transistor comprises an emitter and a collector, or a base made of a transparent n-type semiconductor comprising any one of zinc oxide ZnO, zinc magnesium oxide Mg x Zn 1·x O, zinc cadmium oxide Cd x Zn 1·x O and cadmium oxide CdO doped with group III elements or group VII elements;
a base, or an emitter and a collector made of a transparent p-type semiconductor comprising any one of zinc oxide ZnO, zinc magnesium oxide Mg x Zn 1·x O, zinc cadmium oxide Cd x Zn 1·x O and cadmium oxide CdO doped with group I elements or group V elements; and
a base electrode, an emitter electrode and a collector electrode, in which a transparent conductive material such as conductive ZnO doped or undoped with any one of group III elements, group VII elements and group I elements, a transparent conductor such as In 2 O 3 , SnO 2 and (In-Sn)O x , or an untransparent electrode material are used partially or entirely, the base electrode, the emitter electrode and the collector electrode being respectively formed on said base, said emitter and said collector. |
