METHOD FOR FABRICATING INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

A method for forming an interconnection of a semiconductor device is provided to improve response speed of the semiconductor device by reducing contact resistance between a poly silicon interconnection and a silicon layer. A method for forming an interconnection of a semiconductor device comprises the steps: forming a transistor on a semiconductor wafer; forming an insulation layer on the transistor; forming a contact hole(25) exposing a predetermined region of the transistor by selectively removing the insulation layer; forming a doped amorphous silicon layer(26) on the insulation layer and the contact hole; forming a metal layer(27) on the amorphous silicon layer; and progressing a heat process for the amorphous silicon layer for forming a poly silicon interconnection layer.