| 摘要 |
<p>A micro switching device and a method for manufacturing the same are provided to reduce a driving voltage applied to a driving mechanism for achieving a closed state of the micro-switching device by providing a bent structure of a movable portion. A micro-switching device includes a base substrate(S1), a fixing portion(11), a movable portion(12), a contact electrode(13), a pair of contact electrodes(14A,14B), a driving electrode, and a driving electrode. The fixing portion is joined to the base substrate via a partition layer(17). The fixing portion is made of a silicon material such as monocrystalline silicon. The partition layer is made of silicon dioxide.</p> |
