| 摘要 |
<p>A semiconductor device is provided to lower the aspect ration of a gap region between wordlines by removing a spacer insulation layer capable of having influence on an increase of an aspect ratio. A plurality of wordlines(54) are arranged in a semiconductor substrate(50). A spacer insulation layer(56s) is formed between a first wordline adjacent to one direction of each wordline and the corresponding wordline. An interlayer dielectric(60) is filled between a second wordline adjacent to the other direction each wordline and the corresponding wordline, covering the wordlines and the spacer insulation layer. A source region is defined in a substrate adjacent to one sidewall of the wordline. A drain region is defined in a substrate adjacent to the other sidewall of the wordline. The spacer insulation layer is formed between adjacent wordlines in which the source region is defined. An isolation layer(52) can be formed in the semiconductor substrate to confine a plurality of active regions. The wordlines are disposed to cross the upper portions of the active regions and the isolation layer, and the isolation layer adjacent to one sidewall of each wordline is removed and the active region is connected to a portion from which the isolation layer is eliminated.</p> |
