发明名称 |
LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>A light-emitting device (1) is provided having a current blocking layer (9) of buried structure, a portion of the current blocking layer (9) having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer being of a thickness of not less than 5 nm and not more than 100 nm. It includes an etching stop layer (24) below the current blocking layer (9), the etching stop layer being good in oxidation resistance. The light-emitting device (1) and its manufacturing method are provided such that the device has its current confinement effect improved and its output increased at lower forward voltage.</p> |
申请公布号 |
EP1947705(A1) |
申请公布日期 |
2008.07.23 |
申请号 |
EP20060798408 |
申请日期 |
2006.09.28 |
申请人 |
DOWA ELECTRONICS MATERIALS CO., LTD. |
发明人 |
SAKAMOTO, RYO;IWATA, MASATOSHI;TSUJIKAWA, SUSUMU;KOBAYASHI, YOSHIYUKI |
分类号 |
H01L33/00;H01L33/06;H01L33/10;H01L33/14;H01L33/30;H01S5/183 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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