| 摘要 |
A method for designing a dummy pattern of a semiconductor device is provided to increase the density of dummy patterns by arranging the dummy patterns between main patterns more in a specific order and shape. A first layout is formed by arranging a main pattern(202) and filling up a longitudinal dummy(204) in the residual space. A second layout is formed by removing the longitudinal dummy within a first distance from the main pattern in the first layout. A third layout is formed by filling up a lateral dummy(208) in the residual space of the second layout. The lateral dummy is removed within a second distance from the main pattern in the third layout. |
