A photon detector and a method of fabricating a photon detector

摘要

A photon detector comprises at least one quantum dot structure (103) configured to capture a photo-carrier, the device being configured such that said photo-carrier affects an electrical sensing current through a transport region (104-107). A photon collecting region (102) configured to absorb photons and supply the photo-carrier to said at least one quantum dot structure (103) has a photon collecting area substantially perpendicular to the incident direction of photons to be detected. The cross section of said transport region substantially perpendicular to the incident direction of photons is smaller than the photon collecting area, wherein the cross section is defined as that of the emitter (107) or alternatively the tunnel barrier layers. By keeping the electrically active area of the device as small as possible noise is reduced in the device.