发明名称 |
Method of fabricating a semiconductor device having fluorine-added carbon dielectric film |
摘要 |
A semiconductor device has a dielectric film made of a fluorine-added carbon film formed on a substrate, a metallic layer formed on the fluorine-added carbon film and an adhesive layer formed between the dielectric film and the metallic layer. The adhesive layer is made of a compound layer having carbon and the metal (or metal the same as the metal included in the metallic layer), to protect the metallic layer from being peeled-off from the fluorine-added carbon film.
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申请公布号 |
EP1947685(A2) |
申请公布日期 |
2008.07.23 |
申请号 |
EP20080003967 |
申请日期 |
1999.01.08 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
AKAHORI, TAKASHI;SUZUKU, AKIRA |
分类号 |
H01L21/312;C23C16/26;C23C16/30;C23C16/56;H01L21/768 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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