| 摘要 |
<p>A phase change material layer, a method for manufacturing the same, a phase change memory device formed by the method, and a method for manufacturing the same, and an operation method thereof are provided to prevent interference between unit cells of PRAM by increasing a crystallization temperature. A method for forming a phase change material layer includes: preparing a co-sputtering target having first and second targets in a reaction chamber for a sputtering type phase change material deposition; loading a substrate on which the phase change material layer will be formed in the reaction chamber; and applying first and second RF powers to the first and second targets, respectively. The first target is a Ge-Sb-Te system target. The second target is any one of an In-Sb-Te system target, an In-Sb system target, and an In target. The first and second RF powers have different intensities. The phase change material layer is an IGST layer, a indium content(a) is 15% <= a <=20%.</p> |
