| 摘要 |
The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom. The single crystal and the semiconductor wafer are distinguished by an edge region, which extends from the circumference to a distance of up to R-5 mm radially into the single crystal or the semiconductor wafer and has an iron concentration, wherein the iron concentration in the edge region is less than 1*109 atoms/cm3. |
