发明名称 |
Dual damascene interconnection with metal-insulator-metal capacitor and method of fabricating |
摘要 |
Provided are a dual damascene interconnection with a metal-insulator-metal (MIM) capacitor and a method of fabricating the same. In this structure, an MIM capacitor is formed on a via-level IMD. After the via-level IMD is formed, while an alignment key used for patterning the MIM capacitor is being formed, a via hole is formed to connect a lower electrode of the MIM capacitor and an interconnection disposed under the via-level IMD. Also, an upper electrode of the MIM capacitor is directly connected to an upper metal interconnection during a dual damascene process.
|
申请公布号 |
US7399700(B2) |
申请公布日期 |
2008.07.15 |
申请号 |
US20070897417 |
申请日期 |
2007.08.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KYOUNG-WOO;LEE SOO-GEUN |
分类号 |
H01L21/4763;H01L21/768;H01L21/02;H01L21/28;H01L21/822;H01L21/8242;H01L23/522;H01L27/04 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|