发明名称 MONOLITHISCHER FBAR DUPLEXER UND VERFAHREN ZU DESSEN HERSTELLUNG
摘要 A monolithic bulk acoustic wave (BAW) duplexer, and a method for fabricating same, the duplexer having a transmitter section as a first component filter and a receiver section as a second component filter, both component filters fabricated on a single substrate and both including at least one shunt BAW resonator and one series BAW resonator, each BAW resonator including a resonator section atop an isolation structure provided so as to separate the resonator section from the substrate, including: a patterned bottom electrode material for use as the bottom electrode of each of the resonators of the duplexer; a patterned piezoelectric material for use as the piezolayer of each of the resonators of the duplexer; a patterned top electrode material for use as the top electrode of each of the resonators of the duplexer; a tuning layer for the shunt resonator of each of the two component duplexer filters; and a tuning layer for both the series and shunt resonators of one of the two component duplexer filters. In some applications, each isolation structure is an acoustic mirror. Also in some applications, the duplexer further includes at least one planar spiral inductor provided in the course of depositing one or another layer of material in building up the duplexer, the planar spiral inductor having coils spiraling outward substantially in a plane from an innermost coil to an outermost coil. <IMAGE>
申请公布号 AT400085(T) 申请公布日期 2008.07.15
申请号 AT20010310921T 申请日期 2001.12.28
申请人 NOKIA CORPORATION 发明人 TIKKA, PASI;ELLA, JUHA;KAITILA, JYRKI
分类号 G10K11/04;H03H9/70;H01L41/09;H01L41/22;H03H3/02;H03H9/17;H03H9/54;H03H9/58 主分类号 G10K11/04
代理机构 代理人
主权项
地址