发明名称 Recycling charge to reduce energy consumption during mode transition in multithreshold complementary metal-oxide-semiconductor (MTCMOS) circuits
摘要 In one embodiment, a circuit includes a first circuit block connected to ground via a first sleep transistor, a virtual ground node between the first circuit block and the first sleep transistor, a second circuit block connected to a supply via a second sleep transistor, and a virtual supply node between the second circuit block and the second sleep transistor. The circuit also includes a transmission gate (TG) or a pass transistor connecting the virtual ground node to the virtual supply node to enable charge recycling between the first circuit block and the second circuit block during transitions by the circuit between active mode and sleep mode.
申请公布号 US7400175(B2) 申请公布日期 2008.07.15
申请号 US20070755354 申请日期 2007.05.30
申请人 FUJITSU LIMITED 发明人 FALLAH FARZAN;PAKBAZNIA EHSAN;PEDRAM MASSOUD
分类号 H03K19/00 主分类号 H03K19/00
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