Apparatus for measuring an exposure intensity on a wafer

摘要

An apparatus for measuring an exposure intensity on a wafer is disclosed. According to one aspect, an apparatus for measuring an exposure intensity on a wafer includes an exposure device for generating a radiation having a predetermined wavelength. Further, the apparatus includes a mask at a first predetermined distance from the exposure device for patterned exposure of a wafer A detection device detects the exposure intensity at a second predetermined distance from the exposure device. A compensation device can be moved into the beam path between the exposure device and the detection device for the purpose of influencing the beam path.