发明名称 |
Bias circuit for power amplifier operated by a low external reference voltage |
摘要 |
A bias circuit includes a resistor in parallel with a voltage-drive bias circuit including a GaAs-HBT transistor. This configuration ensures that a current can be supplied from a reference voltage input terminal to the base terminal of a first transistor via the resistor in an idling state in which a voltage applied to the base terminal is lower than a voltage at which a second transistor operates, thereby enabling a desired amplifying operation while maintaining the idling current generally constant in a temperature range, even when the reference voltage is reduced to a value lower than twice the barrier voltage of the GaAs HBT.
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申请公布号 |
US7400202(B2) |
申请公布日期 |
2008.07.15 |
申请号 |
US20060552635 |
申请日期 |
2006.10.25 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
YAMAMOTO KAZUYA;MAEMURA KOUSEI |
分类号 |
H03F3/04 |
主分类号 |
H03F3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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