发明名称 Bias circuit for power amplifier operated by a low external reference voltage
摘要 A bias circuit includes a resistor in parallel with a voltage-drive bias circuit including a GaAs-HBT transistor. This configuration ensures that a current can be supplied from a reference voltage input terminal to the base terminal of a first transistor via the resistor in an idling state in which a voltage applied to the base terminal is lower than a voltage at which a second transistor operates, thereby enabling a desired amplifying operation while maintaining the idling current generally constant in a temperature range, even when the reference voltage is reduced to a value lower than twice the barrier voltage of the GaAs HBT.
申请公布号 US7400202(B2) 申请公布日期 2008.07.15
申请号 US20060552635 申请日期 2006.10.25
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 YAMAMOTO KAZUYA;MAEMURA KOUSEI
分类号 H03F3/04 主分类号 H03F3/04
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