| 摘要 |
There is here disclosed a manufacturing method of a semiconductor device, comprising providing a first film by a PVD process in a recess formed in at least one insulating film, the first film containing at least one metal element belonging to any one of the groups 4 -A, 5 -A, and 6 -A, continuously providing a second film by at least one of CVD and ALD processes on the first film without opening to atmosphere, the second film containing at least one metal element belonging to any one of the groups 4 -A, 5 -A, and 6 -A, continuously providing a third film by the PVD process on the second film without opening to the atmosphere, the third film containing at least one metal element belonging to any one of the groups 4 -A, 5 -A, and 6 -A, continuously providing a first Cu film on the third film without opening to the atmosphere, and heating the Cu film.
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