| 摘要 |
A plasma film-forming method which comprises providing a purifying chamber (2) packed with a substance having a surface layer exhibiting a hydrophilic property or reducing action between a source (1) for supplying a C5H8 gas and a film-forming treatment section (3) for converting the C5H8 gas so as to have a plasmatic state and forming a fluorine-doped carbon film on a wafer (W), passing a C5H8 gas through the purifying chamber (2) to remove the moisture in the C5H8 gas and introduce the resultant C5H8 gas having a moisture content of, for example, about 20 X 10-9 volume ratio to the film-forming treatment section (3), to form a fluorine-doped carbon film. The above plasma film-forming method allows the reduction of the amount of the water incorporated into the resultant fluorine-doped carbon film to an extremely low level, which results in the decrease of the elimination of fluorine in a subsequent heating step due to the moisture in the resultant film, leading to the higher thermal stability of the film. Specifically, the above method allows the formation of a fluorine-doped carbon film exhibiting excellent thermal stability, by preparing and using a C5H8 gas having a moisture content of 60 X 10-9 volume ratio or less.
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