发明名称 |
Methods for manufacturing semiconductor memory devices using sidewall spacers |
摘要 |
Storage nodes for semiconductor memory devices may be fabricated by repeatedly forming conductive and insulating spacers on mold oxide layer pattern sidewalls, to thereby obtain fine line patterns which can increase the surface area of the storage node electrodes. Supporters also may be provided that are configured to support at least one freestanding storage node electrode, to thereby reduce or prevent the storage node electrode from falling or bending towards an adjacent storage node electrode.
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申请公布号 |
US7399689(B2) |
申请公布日期 |
2008.07.15 |
申请号 |
US20050092439 |
申请日期 |
2005.03.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK BYUNG-JUN |
分类号 |
H01L27/10;H01L29/72;H01L21/8242 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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