| 摘要 |
In an aluminum nitride (AlN) substrate (1), which has layer(s) (10) of AlN and an ancillary layer, on at least one surface, to which a copper foil (2) can be fixed by the direct copper bonding (DCB) process, the ancillary layer (4) comprises NOTLESS 50 wt.% copper aluminate, CuAlO2, and contains an excess of copper-I oxide, Cu2O. An Independent claim is also included for the preparation of an AlN substrate for bonding with a Cu foil by a DCB process by applying a layer of Cu, Cu oxide or other compounds containing Cu to at least one surface and oxidation to form CuAl2O4, in which oxidation is followed by reduction to reduce the CuAl2O4 to CuAlO2 and the CuO to Cu2O. |
