发明名称 Electrode, method for forming an electrode, thin-film transistor, electronic circuit, organic electroluminescent element, display, and electronic equipment
摘要 An electrode is provided that is economically produced and capable of efficiently injecting holes. Also provided are a method to form an electrode that is capable of easily manufacturing such an electrode, a highly reliable thin-film transistor, an electronic circuit using this thin-film transistor, an organic electroluminescent element, a display, and electronic equipment. A thin-film transistor is a top-gate thin-film transistor. The thin-film transistor includes a source electrode and a drain electrode that are placed separately from each other. The thin-film transistor also includes an organic semiconductor layer that is laid out between the source electrode and the drain electrode, and a gate insulating layer that is provided between the organic semiconductor layer and a gate electrode. This structure is mounted on a substrate. Each of the source electrode and the drain electrode is composed of two layers, that is, an underlying electrode layer and a surface electrode layer. The surface electrode layer includes an oxide containing at least one of Cu, Ni, Co, Ag.
申请公布号 US7399989(B2) 申请公布日期 2008.07.15
申请号 US20040903386 申请日期 2004.08.02
申请人 SEIKO EPSON CORPORATION 发明人 MORIYA SOICHI;KAWASE TAKEO;HARADA MITSUAKI
分类号 H01L35/24;H01L51/50;H01L21/02;H01L21/28;H01L29/417;H01L29/43;H01L29/786;H01L51/00;H01L51/05;H01L51/10;H01L51/40;H05B33/00;H05B33/10;H05B33/26 主分类号 H01L35/24
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