发明名称 |
Method for using negative tone silicon-containing resist for e-beam lithography |
摘要 |
The negative resist compositions especially suitable for electron beam-based lithographic processes are obtained by using a polymeric component containing first silsesquioxane moieties functionalized with a first reactive group having a first crosslinking reactivity and a first dissolution rate in aqueous alkaline solutions, and second silsesquioxane moieties functionalized with a second reactive group having a second crosslinking reactivity and a second dissolution rate in aqueous alkaline solutions, said reactivities being different from one another and said dissolution rates being different from one another. These negative resists enable improved negative lithographic processes, especially in the context of mask-making and direct-write techniques using electron beam lithography. The negative resists are also useful more generally in methods of forming patterned material features and advantageously show reduced incidence of image collapse at smaller groundrules.
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申请公布号 |
US7399573(B2) |
申请公布日期 |
2008.07.15 |
申请号 |
US20060552677 |
申请日期 |
2006.10.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HUANG WU-SONG S.;SEKARIC LIDIJA;BUCCHIGNANO JAMES J.;KLAUS DAVID P.;VISWANATHAN RAMAN |
分类号 |
G03C7/075 |
主分类号 |
G03C7/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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