发明名称 |
Silicon carbide semiconductor device and method for manufacturing the same |
摘要 |
A method for manufacturing a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate and first to third semiconductor layers; forming a trench in a cell region of the semiconductor substrate; forming a fourth semiconductor layer in the trench; forming an oxide film in the trench such that a part of the fourth semiconductor layer on a sidewall of the trench is thermally oxidized; forming a gate electrode on the oxide film in the trench; forming a first electrode electrically connecting to the third semiconductor layer; and forming a first electrode electrically connecting to the silicon carbide substrate.
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申请公布号 |
US7399676(B2) |
申请公布日期 |
2008.07.15 |
申请号 |
US20050268612 |
申请日期 |
2005.11.08 |
申请人 |
DENSO CORPORATION |
发明人 |
KUMAR MALHAN RAJESH;TAKEUCHI YUICHI |
分类号 |
H01L21/336;H01L21/8242 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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