METHOD FOR FORMING SIC EPITAXIAL LAYER

摘要

A method for forming a SiC epitaxial layer is provided to increase a thickness of the SiC epitaxial layer by reducing a distance between a substrate and SiC powder. SiC powder is provided into a lower part of a crucible. A substrate is installed at a position corresponding to the SiC powder of the crucible. The SiC powder is sintered by increasing the temperature of the crucible at atmospheric pressure. A first epitaxial layer is deposited on the substrate by lowering the pressure and the sublimating the SiC powder. The distance from the SiC powder to the substrate is about 1-2mm. The substrate is a 4H-SiC wafer. A second epitaxial layer is deposited on the first epitaxial layer.