| 发明名称 |
III-nitride semiconductor fabrication |
| 摘要 |
A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes.
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| 申请公布号 |
US7399692(B2) |
申请公布日期 |
2008.07.15 |
| 申请号 |
US20060537304 |
申请日期 |
2006.09.29 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
HE ZHI;BEACH ROBERT |
| 分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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