发明名称 |
Systems and methods for beam angle adjustment in ion implanters |
摘要 |
An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.
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申请公布号 |
US7399980(B2) |
申请公布日期 |
2008.07.15 |
申请号 |
US20070716622 |
申请日期 |
2007.03.09 |
申请人 |
AXCELIS TECHNOLOGIES. INC. |
发明人 |
VANDERBERG BO H.;EISNER EDWARD C. |
分类号 |
H01J37/08 |
主分类号 |
H01J37/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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