Semiconductor device manufacturing method including forming a metal silicide layer on an indium-containing layer

摘要

The present invention provides a semiconductor device manufacturing method of a semiconductor device having a contact plug, in which a contact hole formed by a surface portion of a high-concentration N-type diffusion layer formed on a semiconductor silicon substrate surface and an interlayer insulating film is implanted with indium ions at an energy ranging from 30 to 120 keV and an implantation amount ranging from 1.0x10¹³/cm² to 5.0x10¹⁴/cm² to grow an indium-containing layer on the surface portion of the high-concentration N-type diffusion layer at the bottom of the contact hole.