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发明名称
Method for fabricating WSix gate in semiconductor device
摘要
申请公布号
KR100846391(B1)
申请公布日期
2008.07.15
申请号
KR20020037293
申请日期
2002.06.29
申请人
发明人
分类号
H01L21/336
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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