发明名称 Semiconductor film manufacturing method and substrate manufacturing method
摘要 This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer ( 2 ) on a seed substrate ( 1 ), a semiconductor film forming step of forming a semiconductor film ( 3 ) on the separation layer ( 2 ), and a separation step of separating, by using the separation layer ( 2 ), the semiconductor film ( 3 ) from a composite member (Ia) formed in the semiconductor film forming step.
申请公布号 US7399693(B2) 申请公布日期 2008.07.15
申请号 US20050566170 申请日期 2005.06.15
申请人 CANON KABUSHIKI KAISHA 发明人 SEKIGUCHI YOSHINOBU;YONEHARA TAKAO;KOTO MAKOTO;OKUDA MASAHIRO;SHIMADA TETSUYA
分类号 H01L21/44;H01L33/32 主分类号 H01L21/44
代理机构 代理人
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