发明名称 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF
摘要 A light emitting diode and a manufacturing method thereof are provided to emit light of various colors by using a simple and economical method, without performing an additional heat treatment process. An active layer(50) is interposed between a first barrier layer(40) and a second barrier layer(60), and has a quantum dot layer with plural quantum dots distributed in a surface direction, and an intermediate thin film layer(30) enclosing the quantum dots of the quantum dot layer. A part or all of the quantum dots of the quantum dot layer have a distribution patter similar to that of an adjacent quantum dot layer. A wavelength of the light emitted from the quantum dot layer is longer than that of the light emitted from the intermediate thin film layer.
申请公布号 KR100846293(B1) 申请公布日期 2008.07.14
申请号 KR20070020053 申请日期 2007.02.28
申请人 GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 PARK, SUNG JU;PARK, IL KYU;KWON, MIN KI;CHO, JU YOUNG
分类号 H01L33/06 主分类号 H01L33/06
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