发明名称 |
LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF |
摘要 |
A light emitting diode and a manufacturing method thereof are provided to emit light of various colors by using a simple and economical method, without performing an additional heat treatment process. An active layer(50) is interposed between a first barrier layer(40) and a second barrier layer(60), and has a quantum dot layer with plural quantum dots distributed in a surface direction, and an intermediate thin film layer(30) enclosing the quantum dots of the quantum dot layer. A part or all of the quantum dots of the quantum dot layer have a distribution patter similar to that of an adjacent quantum dot layer. A wavelength of the light emitted from the quantum dot layer is longer than that of the light emitted from the intermediate thin film layer.
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申请公布号 |
KR100846293(B1) |
申请公布日期 |
2008.07.14 |
申请号 |
KR20070020053 |
申请日期 |
2007.02.28 |
申请人 |
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
PARK, SUNG JU;PARK, IL KYU;KWON, MIN KI;CHO, JU YOUNG |
分类号 |
H01L33/06 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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