发明名称 SEMICONDUCTOR MEMORY APPARATUS
摘要 A semiconductor memory apparatus is provided to prevent error of a sensing operation of a second bit line pair after the second bit line pair is equalized without floating the second bit line pair disabled during sensing amplification of a first bit line pair enabled in the semiconductor memory apparatus where one sense amplifier senses and amplifies two bit line pairs. A first equalizing part(110) enables a first bit line pair to have an equal voltage level according to a second bit line separation signal. A first connection part(210) connects or disconnects the first bit line pair to/from a first electrode and a second electrode according to a first bit line separation signal. A precharging part(400) precharges the first bit line pair and a second bit line pair according to a bit line equalization signal. A sense amplifier(300) senses and amplifies one of the first or the second bit line pair according to a sense amplifier control signal. A second connection part(220) connects or disconnects the second bit line pair to/from the first electrode and the second electrode according to the second bit line separation signal. A second equalizing part(120) enables the second bit line pair to have an equal voltage level according to the first bit line separation signal.
申请公布号 KR20080065346(A) 申请公布日期 2008.07.14
申请号 KR20070002355 申请日期 2007.01.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SHIN, SANG HOON
分类号 G11C7/12;G11C5/14;G11C7/06 主分类号 G11C7/12
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