发明名称 VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS USING THE SAME
摘要 A voltage generating circuit and a semiconductor memory apparatus using the same are provided to discharge a pumping voltage generated during active standby operation to a target voltage level. A pumping voltage generation unit(10) generates a pumping voltage. A discharge unit(100) generates plural pulses when pumping operation is performed during active standby operation, and discharges the pumping voltage in response to one of the plural pulses selected according to a test signal or connection state of a fuse. The discharge unit includes a signal assembly part, a pulse generation part, a pulse selection part and a discharge part. The signal assembly part generates a pulse enable signal when the pumping operation is performed during the active standby operation. The pulse generation part generates the plural pulses with different enable time when the pulse enable signal is enabled. The pulse selection part outputs one pulse as a discharge pulse according to the test signal or the connection state of the fuse. The discharge part discharges the pumping voltage in response to the discharge pulse.
申请公布号 KR100845800(B1) 申请公布日期 2008.07.14
申请号 KR20070014240 申请日期 2007.02.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, KHIL OHK
分类号 G11C5/14;G11C29/00 主分类号 G11C5/14
代理机构 代理人
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