| 发明名称 |
PROCESS FOR MANUFACTURE OF SUPER LATTICE USING ALTERNATING HIGH AND LOW TEMPERATURE LAYERS TO BLOCK PARASITIC CURRENT PATH |
| 摘要 |
<p>A method for fabricating a III-nitride semiconductor body that include high temperature and low temperature growth steps.</p> |
| 申请公布号 |
KR20080065586(A) |
申请公布日期 |
2008.07.14 |
| 申请号 |
KR20087006408 |
申请日期 |
2006.09.14 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BRIDGER PAUL;BEACH ROBERT |
| 分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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