METHOD OF FORMING A PATTERN FOR SUB-RESOLUTION ASSIST FEATURES

摘要

A method for forming a sub-resolution assist pattern is provided to form clearly an assist pattern of 90nm or less by improving a manufacturing method without improving resolution of photoresist and using an additional exposure apparatus. A fusing pattern(120) including a main pattern, an assist pattern, and a residual region between the main and assist patterns is formed on a substrate(110). A mask is formed on the fusing pattern in order to open only the residual region. The residual region is removed by using the mask. In the process for removing the mask, a photoresist layer(130) is formed on the fusing pattern. The photoresist layer is exposed by using a pattern of the residual region. The photoresist layer corresponding to the residual region is removed.