<p>A method for forming a semiconductor device is provided to avoid problems in forming wordlines by a damascene process by forming a conductive layer and by patterning the conductive layer by a mask pattern. Pin active patterns parallel with each other are extended in one direction on a substrate(100). Pillar active patterns(130) are formed on the pin active patterns, respectively. A gap between the pin active patterns is filled with a field insulation layer. Gates surrounding the pillar active patterns are formed on the sidewalls of the pillar active patterns so that vertical channels are formed on the lateral surface of the sidewall of the pillar active pattern. A gap between the gates is filled with a conductive layer. The conductive layer is patterned to form wordlines that extend the gates in a direction vertical to the extension direction of the pin active patterns. A gap between the wordlines can be filled with an interlayer dielectric. Mask patterns for forming the pillar active patterns can be formed.</p>
