| 摘要 |
The invention relates to the field of opto-electronic technology and is intended to create transparent conducting layers. More particularly, the invention relates to the field of manufacturing of ceramic materials and is used in manufacturing of ceramic targets, which serve as a source of material in film application methods by magnetron sputtering, electronic beams, ionic beams and other film application methods in micro-, opto-and nano-electronics as well as to films produced from such ceramic target and to a manufacturing process of said films. Disclosed is a ceramic target containing zinc oxide alloyed by gallium and containing between 0.5 and 6 % of gallium atoms and between 0.1 and 2 % of boron atoms, wherein the gallium and boron part is contained in crystallites of zinc oxide as substitution impurity, and the boron and gallium remaining part is contained together with zinc in the amorphous intergranular phase. Disclosed is also a film containing zinc oxide with prevalent orientation (001), alloyed by gallium in the structure of which 0.1 to 2 % of zinc atoms are substituted by boron atoms and 0.5 to 6 % of zinc atoms are substituted by gallium atoms, as well as a corresponding manufacturing process.
|
