| 摘要 |
<p>A method for forming micro patterns of semiconductor devices is provided to obtain micro patterns by implementing a second photoresist pattern on a first photoresist pattern. First photoresist patterns(17) are formed on a semiconductor substrate including an object etch layer. Pattern hardening coating materials are coated on the first photoresist patterns and then a pattern hardening film(19) is formed. Then, a second photoresist film is formed on the resultant structure. Exposure and development processes are performed on the second photoresist film and then second photoresist patterns(23) are formed between the first photoresist patterns.</p> |
