Solid-state imaging device and method of manufacturing the same

摘要

A solid-state imaging device comprises: a semiconductor substrate (101) having a first surface; a solid-state imaging element (102) in the first surface of the semiconductor substrate, the solid-state imaging element comprising a light-receiving region; and a light-transmission member (201) having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap (C) between the second surface of the light-transmission member and an outer surface of the light-receiving region. The device additionally comprises an external connection terminal (BP) connected to the solid-state imaging element; and a spacer (2035) between the second surface of the light-transmission member (201) and the first surface of the semiconductor substrate (101) so that the distance between the outer surface of the light-receiving region and the third surface of the light-transmission member is set to be 0.5 mm or more, and the width of the spacer (203 S) is 100 to 500 µm. The invention also extends to a method of manufacturing such a solid-state imaging device.