METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent deterioration of electrical characteristics by improving an etching profile in a gate patterning process. A gate insulating layer(12,13) is formed on a substrate(11) including an NMOS region and a PMOS region. A first polysilicon layer is formed on the gate insulating layer. A mask pattern is formed on the first polysilicon layer of the NMOS region. A P type impurity is doped into the first polysilicon layer of the PMOS region. The mask pattern is removed. A first polysilicon electrode is formed by patterning the first polysilicon layer. A second polysilicon layer is formed on the entire surface of the substrate including the first polysilicon electrode. A gate electrode(17) is formed by patterning the second polysilicon layer in order to surround the first polysilicon layer.