| 摘要 |
<p>A method for fabricating semiconductor devices is provided to prevent leaching even when a top coating layer is contacted with a photoresist layer by implementing the top coating layer using ice. Photoresist compositions are coated on a semiconductor substrate(10) including an object etch layer. Then, a photoresist film is formed. Liquid water is coated on the photoresist film and the coated water is hardened. At this time, the liquid water is cooled down to the temperature of 0 to -20°C. A top coating layer(16) is then formed. An exposure process is performed on the resultant structure using an immersion lithography process. By developing the resultant structure, micro patterns are formed.</p> |
