发明名称 |
Method for implanting ions into semiconductor substrate |
摘要 |
<p>An ion implantation method for implanting ions into a side wall of a protruded semiconductor layer from a semiconductor substrate, the method includes applying an electric field to accelerate the ions in one direction and applying a magnetic field parallel to a plane extending at a predetermined angle with respect to the one direction, thereby controlling a direction of the ion implantation to the side wall.
</p> |
申请公布号 |
EP1507287(A3) |
申请公布日期 |
2008.07.09 |
申请号 |
EP20040254851 |
申请日期 |
2004.08.12 |
申请人 |
MASUOKA, FUJIO;SHARP KABUSHIKI KAISHA |
发明人 |
MASUOKA, FUJIO;HORII, SHINJI;TANIGAMI, TAKUJI;YOKOYAMA, TAKASHI |
分类号 |
H01L21/265;H01L27/115;H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|