发明名称 METHOD FOR MANUFACTURING OF THIN FILM TRANSISTOR ARRAY PANEL
摘要 <p>A method for manufacturing a thin film transistor display panel is provided to realize dark black during driving of a black screen by removing particles generated on a surface of a first gate insulation layer. A method for manufacturing a thin film transistor display panel includes: forming a gate wire(22) having a gate electrode(26) on an insulation substrate; forming a first gate insulation layer covering the gate wire, carrying out first plasma processing on a surface of the first gate insulation layer; washing a surface of the first gate insulation layer; carrying second plasma processing on a surface of the first gate insulation layer; forming a second gate insulation layer on the first gate insulation layer; forming a semiconductor pattern on a second gate insulation layer; forming a data wire including source and drain electrodes that are separated from each other on the semiconductor pattern; and forming a pixel electrode electrically connected to the drain electrode.</p>
申请公布号 KR20080064342(A) 申请公布日期 2008.07.09
申请号 KR20070001134 申请日期 2007.01.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YANG, SUNG HOON;KIM, BYOUNG JUNE;JEONG, SOO IM;OH, HWA YEUL;CHOI, JAE HO;GIROTRA KUNAL
分类号 H01L29/786 主分类号 H01L29/786
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