PHASE CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING FOR THE SAME

摘要

A phase change memory device and a method for manufacturing the same are provided to prevent degradation in a boundary between a BEC(Back Electrode Contact) and a phase change layer using a phase change layer as the BEC thereof. A phase change memory device includes a lower electrode, a BEC(23), a first phase change layer, a second phase change layer, and an upper electrode(26). The BEC is formed on the lower electrode by using phase change materials. The first phase change layer is formed on the BEC, and has a width less than that of the BEC. The second phase change layer is formed on the first phase change layer, and has a width greater than that of the first phase change layer. The upper electrode is formed on the second phase change layer. A first insulation layer is formed on a lateral surface of the lower electrode and a side of the BEC. A second insulation layer is formed on a lateral surface of the first phase change layer.