| 摘要 |
A method for forming a transistor of a semiconductor device is provided to maintain the size of a gate and the thickness of the side wall of a cell spacer layer. A method for forming a transistor of a semiconductor device includes: forming a recess trench in a semiconductor substrate(200); forming a gate insulation layer, a gate conductive layer, a gate metal layer, and a hard mask layer on the semiconductor substrate having the recess trench; forming a hard mask layer pattern(224) and a gate metal layer pattern(232) by patterning the hard mask layer and the gate metal layer; etching a side wall of the gate metal layer pattern by a predetermined thickness by performing a washing process using ozone on the semiconductor substrate; forming a plasma oxide layer on a side wall of the gate metal layer pattern by performing an oxidation process on the semiconductor substrate; depositing a capping layer on the semiconductor substrate; and forming a gate stack(242) and a spacer layer(244) on both side surfaces of the gate stack by etching the gate conductive layer and the gate insulation layer with an etching barrier layer.
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