| 摘要 |
A method for manufacturing semiconductor devices is provided to prevent contact area error on an upper layer by widening a width of an upper portion of a contact hole through a wet etching. Patterns are formed on a substrate(201). An etch barrier film(204) is formed on a resultant structure including the patterns. By performing etching on the etch barrier film, a substrate between patterns is opened. Conductive materials(205) with a thickness are formed on the opened substrate. An interlayer dielectric is formed to fill between the patterns on the conductive materials. By etching the interlayer dielectric based on self align contact etching, a contact hole(208) is formed. An upper portion of the contact hole is widened by performing a wet etching.
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