THIN FILM DEPOSITION METHOD COMPRISING IMPROVED METAL PRECURSOR FEEDING AND PURGING STEP

摘要

A thin film deposition method comprising an improved metal precursor feeding and a purging step is provided to reduce the time required for obtaining a thin film with a desired thickness by improving a deposition speed in a short process time. A thin film deposition method comprising an improved metal precursor feeding and a purging step includes the steps of: subsequently and repeatedly performing the step of providing the metal precursor and the purging step(S1) two times; and providing and purging a reaction gas in order to divide the metal precursor(S2). A total time required for performing the step of providing the metal precursor is the same as that required for providing the metal precursor of the corresponding steps of providing and purging the metal precursor, and a total time required for performing the step of purging the metal precursor is the same as that required for purging the metal precursor of the corresponding steps of providing and purging the metal precursor.