Process and integration scheme for a high sidewall coverage ultra-thin metal seed layer

摘要

The present invention provides a method of forming a metal seed layer 100 . The method includes physical vapor deposition of seed metal 200 within an opening 140 located in a dielectric layer 135 of a substrate 110 . The method also includes a RF plasma etch of the seed metal 200 deposited in the opening 140 simultaneously with conducting the physical vapor deposition of the seed metal 200.