CAPACITORLESS DRAM AND METHOD FOR MANUFACTURING THE SAME

摘要

A capacitor-less DRAM and a method for manufacturing the same are provided to suppress disturbance by using a metal shielding effect. A capacitor-less DRAM includes a substrate(11), a first pin(13), a second pin(14), a first gate(15), and a second gate(17). The first pin and the second pin are protruded from the substrate to be spaced apart from each other. At least a part of the first gate is positioned between the first pin and the second pin. The second gate surrounds the first pin, the second pin, and the first gate to form a gate structure intersecting the first gate. Insulation material fills among the first pin, the second pin, the first gate, and the second gate.