发明名称 |
Method of fabricating high-k dielectric layer having reduced impurity |
摘要 |
Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.
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申请公布号 |
US7396777(B2) |
申请公布日期 |
2008.07.08 |
申请号 |
US20050107559 |
申请日期 |
2005.04.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG HYUNG-SUK;LEE JONG-HO;LIM HA-JIN;PARK JAE-EUN;KIM YUN-SEOK;YANG JONG-HO |
分类号 |
H01L21/31;C23C16/40;H01L21/28;H01L21/314;H01L21/336;H01L21/469;H01L29/51 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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